E-Mode AlN/GaN HEMTs on Si With 80.4% PAE at 3.6 GHz for Low-Supply-Voltage RF Power Applications

被引：0

作者：

Gao, Guangjie ^{[1
,2
]}

Liu, Zhihong ^{[1
,2
]}

Hao, Lu ^{[1
,2
]}

Zhang, Fang ^{[1
,2
]}

Chen, Xiaojin ^{[1
,2
]}

Du, Hanghai ^{[1
,2
]}

Xing, Weichuan ^{[2
]}

Zhou, Hong ^{[1
,2
]}

Zhang, Jincheng ^{[1
,2
]}

Hao, Yue ^{[1
,2
]}

机构：

[1] Xidian Univ, Sch Microelect, Key Lab Wide Band Gap Semicond Mat & Devices, Xian 710071, Peoples R China

[2] Xidian Univ, Guangzhou Inst Technol, Guangzhou 510555, Peoples R China

来源：

IEEE ELECTRON DEVICE LETTERS | 2025年 / 46卷 / 01期

关键词：

MODFETs; HEMTs; Logic gates; Silicon; Radio frequency; Silicon carbide; Ohmic contacts; Wide band gap semiconductors; Surface morphology; Substrates; E-mode; GaN on Si; load-pull;

D O I：

10.1109/LED.2024.3495672

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Enhancement-mode (E-mode) AlN/GaN high electron mobility transistors (HEMTs) with a 160-nm T- shape recessed gate on a silicon substrate were fabricated. The fabricated device has a V TH of + 0.35 V, and shows a maximum drain current (I DMAX ) of 1.58 A/mm, a low on- resistance (RON) of 1.8 Sl<middle dot> mm, and a peak transconductance (G MMAX ) over 580 mS/mm. A cut-off frequency (fT) of 85 GHz and a maximum oscillation frequency (fmax) of 75 GHz were obtained. Load pull continuous-wave (CW) power sweep measurement at 3.6 GHz demonstrated a peak power-added-efficiency (PAE) of 71.4% and a saturated output power density (Pout) of 0.70 W/mm at V DS = 6 V. At 3.6 GHz pulsed wave (PW) power sweep at V DS = 6 V the device demonstrated an 80.4% PAE and 0.5 W/mm associated Pout.These results promises the great potential of E-mode AlN/GaN HEMTs with gate recess in the applications of low supply voltage RF power applications.

引用

页码：40 / 43

页数：4