Stability of amorphous alumina layers deposited on platinum films by r.f. magnetron sputtering in water solutions. A microscopic approach based on scanning electrochemical microscopy

被引:0
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作者
Battistel, Dario [1 ]
Bragato, Carlo [1 ]
Baldo, M. Antonietta [2 ]
Cattaruzza, Elti [2 ]
Daniele, Salvatore [2 ]
机构
[1] Ca Foscari Univ Venice, Dept Environm Sci Informat & Stat, Via Torino 155 Mestre, I-30170 Venice, Italy
[2] Ca Foscari Univ Venice, Dept Mol Sci & Nanosyst, Via Torino 155 Mestre, I-30170 Venice, Italy
关键词
Amorphous alumina; r.f. magnetron sputtering; Thin films; Aqueous stability; Scanning electrochemical microscopy (SECM); AL2O3; THIN-FILMS; ONE-DIMENSIONAL NANOSTRUCTURE; OPTICAL-PROPERTIES; TEMPERATURE; CORROSION; COATINGS; OXIDE; TIO2; ION; ELECTRODES;
D O I
10.1016/j.surfin.2025.106092
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
A series of bilayers, formed by amorphous Al2O3 (thickness in the range 60-1000 nm) and Pt (thickness 300 nm) films, deposited by r.f. magnetron sputtering on a silicon substrate, was investigated by scanning electrochemical microscopy (SECM) to establish the stability of Al2O3 in contact with aqueous solutions, containing various electrolytes at different pH. Under mild acidic conditions (pH 6.5-4.6), SECM responses indicated that the Al2O3 layers were stable. To achieve more acidic (pH < 3) and basic (pH > 9) conditions, avoiding the use of harmful strong acids or bases, local H+ and OH- challenges were electrogenerated at the SECM tip through water electrolysis at constant currents. pH 2.3 and 11.6 were attained on the Al2O3 surface, as predicted by finite element simulation. At low pH, a slow dissolution kinetic was involved. At high pH, the formation of the soluble AlO2- species triggered a faster alumina dissolution, which led to the formation of etch pits. The geometric features of the etch pits, evaluated by SECM as a function of the electrolysis time, afforded to a mass dissolution rate of 6.7 (+/- 0.6) x 10(-)(1)(2) moles<middle dot>min(-)(1) and to a vertical dissolution rate of 308 (+/- 15) nm<middle dot>h(-)(1).
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页数:12
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