Low Temperature Wafer Level Hybrid Bonding Enabled by Advanced SiCN and Surface Activation

被引：2

作者：

Inoue, Fumihiro ^{[1
]}

Nagata, Atsushi ^{[2
]}

Fuse, Junya ^{[1
]}

Ebiko, Sodai ^{[1
]}

Sato, Ryosuke ^{[1
]}

Saito, Kenichi ^{[3
]}

Kondo, Yoshihiro ^{[2
]}

Kawauchi, Takuo ^{[3
]}

Park, Junghwan ^{[4
]}

Ahn, Chiwoo ^{[4
]}

Kim, Myeonghyeon ^{[4
]}

Kang, Jiho ^{[4
]}

机构：

[1] YOKOHAMA Natl Univ, Yokohama, Kanagawa, Japan

[2] Tokyo Electron Kyushu Ltd, Kumamoto, Japan

[3] Tokyo Electron Ltd, Tokyo, Japan

[4] SK Hynix Inc, Ichon, South Korea

来源：

PROCEEDINGS OF THE IEEE 74TH ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE, ECTC 2024 | 2024年

关键词：

Hybrid bonding; SiCN; Bond strength; Bonding mechanisms; TECHNOLOGY;

D O I：

10.1109/ECTC51529.2024.00020

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Dielectric layer of hybrid bonding is one of the most critical materials for the yield and reliability because it is the majority of the bonding surface/interface. This paper demonstrates 300mm wafer bonding using SiCN and optimized plasma activation, where the bond strength is high at low temperatures (250 degrees C). A new method to measure bond strength accurately is used to understand how the bonding process works. By carefully characterizing the SiCN and plasma conditions, we achieved similar bond strength at both high and low temperatures, opening doors for low-temperature hybrid bonding applications.

引用

页码：69 / 75

页数：7

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