Low-temperature and hydrogen-free silicon dioxide cladding for next-generation integrated photonics

被引：0

作者：

Li, Zihan ^{[1
,2
]}

Qiu, Zheru ^{[1
,2
]}

Wang, Rui Ning ^{[3
]}

Ji, Xinru ^{[1
,2
]}

Divall, Marta ^{[1
,2
]}

Siddharth, Anat ^{[1
,2
]}

Kippenberg, Tobias J. ^{[1
,2
]}

机构：

[1] Swiss Fed Inst Technol Lausanne EPFL, CH-1015 Lausanne, Switzerland

[2] Ecole Polytech Fed Lausanne, Ctr Quantum Sci & Engn, CH-1015 Lausanne, Switzerland

[3] Luxtelligence SA, CH-1015 Lausanne, Switzerland

来源：

2024 OPTICAL FIBER COMMUNICATIONS CONFERENCE AND EXHIBITION, OFC | 2024年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We demonstrate a process for hydrogen-free low-loss silicon oxide (SiO2) films deposited using SiCl4 and O-2 as precursors. A wide low-loss window from 1260 nm to 1625 nm is achieved at a deposition temperature of 300 degrees C, essential for next generation photonic integrated circuits. (c) 2023 The Author(s)

引用

页数：3

共 50 条

[41] KINETICS OF LOW-TEMPERATURE REDUCTION OF GERMANIUM DIOXIDE BY HYDROGEN
AGARKOVA, GA
SADYKOV, RM
ZHURNAL PRIKLADNOI KHIMII, 1971, 44 (07) : 1629 - &
[42] BEHAVIOR OF CHLORINE IMPURITY IN SILICON - LOW-TEMPERATURE SILICON DIOXIDE STRUCTURES
BASHKIN, MO
EMELYANOV, AV
MENSHIKOV, OD
PORTNOV, SM
INORGANIC MATERIALS, 1991, 27 (12) : 2122 - 2125
[43] Study of a Low-Temperature Bonding Process for a Next-Generation Flexible Display Module Using Transverse Ultrasound
Ji, Myeong-Gu
Song, Chun-Sam
Kim, Joo-Hyun
Kim, Jong-Hyeong
TRANSACTIONS OF THE KOREAN SOCIETY OF MECHANICAL ENGINEERS A, 2012, 36 (04) : 395 - 403
[44] Low temperature thin films for next-generation microelectronics (invited)
Schmitz, Jurriaan
SURFACE & COATINGS TECHNOLOGY, 2018, 343 : 83 - 88
[45] INFLUENCE OF LOW-TEMPERATURE HYDROGEN DEGASSING ON HYDROGEN-INDUCED DISBONDING OF CLADDING.
Morishige, Norio
Kume, Ryoichi
Okabayashi, Hisaki
Transactions of the Japan Welding Society, 1985, 16 (01): : 12 - 18
[46] Influential factors in low-temperature direct bonding of silicon dioxide
Shirahama, Ryouya
Duangchan, Sethavut
Koishikawa, Yusuke
Baba, Akiyoshi
2015 INTERNATIONAL 3D SYSTEMS INTEGRATION CONFERENCE (3DIC 2015), 2015,
[47] Low-temperature etching of silicon oxide and silicon nitride with hydrogen fluoride
Lill, Thorsten
Wang, Mingmei
Wu, Dongjun
Oh, Youn-Jin
Kim, Tae Won
Wilcoxson, Mark
Singh, Harmeet
Ghodsi, Vahid
George, Steven M.
Barsukov, Yuri
Kaganovich, Igor
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2024, 42 (06):
[48] Low-temperature deposition of silicon dioxide and silicon nitride for dual Spacer application
Chatham, Hood
Mogaard, Martin
Treichel, Helmuth
2007 IEEE/SEMI ADVANCED SEMICONDUCTOR MANUFACTURING CONFERENCE, 2007, : 79 - +
[49] Low-temperature direct bonding of silicon and silicon dioxide by the surface activation method
Takagi, H
Maeda, R
Chung, TR
Suga, T
SENSORS AND ACTUATORS A-PHYSICAL, 1998, 70 (1-2) : 164 - 170
[50] GENERATION CURRENT REDUCTION AT LOCAL OXIDATION OF SILICON ISOLATION EDGE BY LOW-TEMPERATURE HYDROGEN ANNEALING
KIMURA, M
MOTONAMI, K
ONODERA, Y
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1991, 30 (12B): : 3634 - 3637

← 1 2 3 4 5 →