Current Transport Mechanisms and Electrophysical Characteristics of the 4H-SiC p-n Junctions Formed by Aluminum Diffusion

被引：0
|
作者：
Juraev, Khimmatali [1 ,2 ]
Khajiev, Mardonbek [1 ,2 ]
Kutlimratov, Aleksandr [1 ]
Akhmedov, Abdumirkhakim [2 ]
Saidov, Dilmurod [3 ]
机构：
[1] Uzbek Acad Sci, Phys Tech Inst, Chingiz Aytmatov Str 2B, Tashkent 100084, Uzbekistan
[2] Tashkent Inst Irrigat & Agr Mechanizat Engn, Kori Niyoziy 39, Tashkent 100084, Uzbekistan
[3] Tashkent Univ Informat Technol, Urgench Branch, Urgench, Uzbekistan
来源：
MATERIALS SCIENCE-MEDZIAGOTYRA | 2025年 / 31卷 / 01期
关键词：
4H-SiC; aluminum diffusion; p -n junction; I -V characteristic; C -V characteristic; SELECTIVE DIFFUSION; DIODES;
D O I：
10.5755/j02.ms.36681
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this paper, the electrophysical characteristics of the 4H-SiC p-n junction created by low-temperature diffusion of aluminum were studied. Current-voltage (I-V) characteristics are analysed, and the current transport mechanisms in 4HSiC p-n junctions are discussed. It is shown that at low forward bias voltages, the generation-recombination mechanism dominates, and the I-V characteristics at voltages U > 3.0 V obey the linear law. At reverse biases, the dominant mechanism of current transfer is limited by the space charge.
引用
收藏
页码：18 / 21
页数：4
相关论文
共 50 条
  • [21] Boron and aluminum diffusion into 4H-SiC substrates
    Kubiak, Andrzej
    Rogowski, Jacek
    MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, 2011, 176 (04): : 297 - 300
  • [22] Electrical properties and electroluminescence of 4H-SiC p-n junction diodes
    Sun, GS
    Zhang, YX
    Gao, X
    Wang, L
    Zhao, WS
    Zeng, YP
    Li, JM
    JOURNAL OF RARE EARTHS, 2004, 22 : 275 - 278
  • [23] High-voltage (1800 V) planar 4H-SiC p-n junctions with floating guard rings
    Ivanov, P. A.
    Grekhov, I. V.
    Il'inskaya, N. D.
    Samsonova, T. P.
    Potapov, A. S.
    SEMICONDUCTORS, 2009, 43 (04) : 505 - 507
  • [24] Wannier-Stark ladder conditions in 4H-SiC p-n junctions grown on off axis substrates
    Sankin, V. I.
    Shkrebiy, P. P.
    Yakimova, R.
    APPLIED PHYSICS LETTERS, 2006, 89 (23)
  • [25] High-voltage (1800 V) planar 4H-SiC p-n junctions with floating guard rings
    P. A. Ivanov
    I. V. Grekhov
    N. D. Il’inskaya
    T. P. Samsonova
    A. S. Potapov
    Semiconductors, 2009, 43 : 505 - 507
  • [26] Electric field breakdown mechanisms in high power epitaxial 4H-SiC p-n junction diodes
    Tin, CC
    Madangarli, V
    Luckowski, E
    Casady, J
    IsaacsSmith, T
    Williams, JR
    Johnson, RW
    Gradinaru, G
    Sudarshan, TS
    ICSE '96 - 1996 IEEE INTERNATIONAL CONFERENCE ON SEMICONDUCTOR ELECTRONICS, PROCEEDINGS, 1996, : 55 - 58
  • [27] Electron-beam-induced current observed for dislocations in diffused 4H-SiC P-N diodes
    Maximenko, S
    Soloviev, S
    Cherednichenko, D
    Sudarshan, T
    APPLIED PHYSICS LETTERS, 2004, 84 (09) : 1576 - 1578
  • [28] Avalanche breakdown characteristics of 4H-SiC graded p+-n junction formed with aluminum ion-implanted p+-layer
    Ono, S.
    Katakami, S.
    Arai, M.
    REPORT OF RESEARCH CENTER OF ION BEAM TECHNOLOGY, HOSEI UNIVERSITY, 2009, (27): : 33 - 36
  • [29] Avalanche Breakdown Characteristics of 4H-SiC Graded p+-n Junction Formed with Aluminum Ion-implanted p+-layer
    Ono, S.
    Katakami, S.
    Arai, M.
    SILICON CARBIDE AND RELATED MATERIALS 2008, 2009, 615-617 : 675 - 678
  • [30] RADIATIVE RECOMBINATION IN GAAS P-N JUNCTIONS FORMED BY BERYLLIUM DIFFUSION
    YUNOVICH, AE
    ELISEEV, PG
    NAKHODNO.IA
    ORMONT, AB
    OSADCHAY.LA
    STUCHEBN.VM
    SOVIET PHYSICS SOLID STATE,USSR, 1964, 6 (06): : 1496 - +
12345