Is the gain-voltage dependence of SiPMs linear?

被引：0

作者：

Antonello, M. ^{[1
]}

Brinkmann, L. ^{[1
]}

Garutti, E. ^{[1
]}

Klanner, R. ^{[1
]}

Schwandt, J. ^{[1
]}

机构：

[1] Univ Hamburg, Inst Expt phys, Luruper Chaussee 149, D-22761 Hamburg, Germany

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2025年 / 1076卷

关键词：

Silicon photo multipliers; Response linearity; Break-down voltage;

D O I：

10.1016/j.nima.2025.170444

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The gain-voltage dependence for SiPMs from Ref.(V. Chmill et al., 2017) (V. Chmill et al., Study of the breakdown voltage of SiPMs) is reanalyzed and a non-linearity at the sub-percent level is observed. Simulations show that the non-linearity can be explained by the increase of the depletion depth of the avalanche region with over-voltage. A consequence of the non-linearity is that the voltage at which the discharge stops is systematically underestimated if a linear extrapolation is used. However, the shift is too small to explain the difference between the break-down voltage from the current-voltage dependence and the one obtained from the extrapolation of the gain-voltage dependence to gain one. The results are confirmed by measurement of a different MPPC produced by Hamamatsu which has a break-down voltage which is about a factor two higher.

引用

页数：4

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