STUDY OF PHOTOCONDUCTIVITY OF THIN FILMS OF CADMIUM SELENIDE OBTAINED BY CHEMICAL DEPOSITION

被引:0
|
作者
Ibrahimova, L. N. [1 ]
Abdullayev, N. M. [2 ]
Gardashbeyova, N. A. [1 ]
Alekperov, A. S. [3 ,4 ]
Azimova, S. R. [2 ]
Aliyev, Y. I. [3 ,4 ]
机构
[1] Nakhchivan State Univ, AZ-7012 Nakhchivan, Azerbaijan
[2] Minist Sci & Educ Azerbaijan, Inst Phys, Baku AZ-1143, Azerbaijan
[3] Azerbaijan State Pedag Univ, Baku AZ-1000, Azerbaijan
[4] Western Caspian Univ, Baku AZ-1001, Azerbaijan
来源
关键词
Chemical deposition; CdSe; Thin film; Photoelectricity spectrum; Band gap;
D O I
10.26565/2312-4334-2024-3-38
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
In this work, the photoconductivity (PC) spectrum of thin CdSe films was studied. In the course of studies on glass substrates, thin films of cadmium and selenium with a thickness of h = 200 nm and h = 400 nm were selected. The thickness of the samples obtained by chemical deposition was determined by the gravimetric method. Since CdSe crystal is a light-sensitive semiconductor material, the photoconductivity of thin films has been studied. The spectra obtained during studies carried out at a wavelength )L = 600-1100 nm were analyzed. It has been established that the spectrum is chaotic, since in the h = 200 nm layers the phase is not completely formed. In the layers h = 400 nm, a maximum centered at the wavelength )L = 710 nm was recorded.
引用
收藏
页码:340 / 343
页数:4
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