Development of Stretchable Low-Dielectric Film Using Hydrophobic PDMS with Porous Silica and Surfactant

被引:0
|
作者
Gu, Moses [1 ]
Yuhwan, Hwangbo [1 ]
Kim, Seonwoo [2 ]
Kim, Yubin [2 ]
Park, Se-Hoon [2 ]
Choa, Sung-Hoon [1 ]
Nam, Hyun Jin [2 ]
机构
[1] Seoul Natl Univ Sci & Technol, Dept Semicond Engn, Gongneung Ro 232, Seoul 01811, South Korea
[2] Korea Elect Technol Inst KETI, ICT Device Packaging Res Ctr, 25 Saenari Ro, Seongnam Si 13509, Gyeonggi Do, South Korea
关键词
low-k material; polydimethylsiloxane; S; -parameter; high frequency; CONSTANT; POSS;
D O I
10.7317/pk.2024.48.6.630
中图分类号
O63 [高分子化学(高聚物)];
学科分类号
070305 ; 080501 ; 081704 ;
摘要
A stretchable low-dielectric film was developed using hydrophobic polydimethylsiloxane (PDMS) with porous silica and surfactant. The surface property changes due to the presence or absence of the surfactant were confirmed through contact angle hysteresis and 3D microscopy. The dielectric properties were observed according to the content of porous silica, and the film with a 25% content ratio showed the lowest dielectric constant. Compared to pure PDMS film, the dielectric constant decreased from 2.75 to 2.53, approximately an 8% reduction, and the dielectric loss decreased from 0.045 to 0.025, approximately a 44% reduction. With the improvement in dielectric properties, the S-parameter characteristics showed that the S11 value improved from-13.7 dB to-22.06 dB, approximately a 61% improvement, and the S21 value improved from-3.89 dB to-2.69 dB, approximately a 31% improvement. The stretchability of PDMS with excellent dielectric properties was up to 80%, and the tensile strain rate of the low-dielectric PDMS fabricated as a transmission line was up to 60%. In the repeated tensile test to verify durability, resistance measurement was possible even after 130 repetitions at a tensile strain rate of 15%.
引用
收藏
页码:630 / 638
页数:9
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