Interdiffusion in chalcogenide semiconductor superlattice nanostructures

The diffusion intermixing of layers during annealing of epitaxial superlattice nanostructures based on chalcogenide semiconductors (PbS, PbSe, PbTe, EuS, EuSe, SrS) was studed by X-ray diffraction technique. The interdiffusion coefficients were determined basing on changing of the intensity of near-Bragg reflection satellites in X-ray diffraction pattern. Layer materials in superlattices EuS-PbTe and PbS-PbTe are not intermixed.