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Computational investigation of electronic, thermoelectric, and optical properties in Cs2LiBiX6(X = Br, I) for energy harvesting applications
被引:1
|作者:
Rafiq, Qaiser
[1
]
Azam, Sikander
[2
]
Jawad, Muhammad
[2
]
Nazeer, Faisal
[3
]
El Azab, Islam H.
[4
]
Mersal, Gaber A. M.
[5
]
机构:
[1] Int Islamic Univ, Dept Phys, Islamabad 44000, Pakistan
[2] Riphah Int Univ, Dept Phys, Islamabad, Pakistan
[3] China Univ Min & Technol, Xuzhou, Peoples R China
[4] Taif Univ, Coll Sci, Dept Food Sci & Nutr, POB 11099, Taif 21944, Saudi Arabia
[5] Taif Univ, Coll Sci, Dept Chem, POB 11099, Taif 21944, Saudi Arabia
来源:
关键词:
Structural properties;
Electronic properties;
Optical properties;
DFT;
Figure of merit (ZT);
DOUBLE-PEROVSKITE;
TRANSPORT-PROPERTIES;
DIELECTRIC FUNCTION;
SOLAR-CELLS;
CL;
SEMICONDUCTORS;
CONDUCTIVITY;
SUBSTITUTION;
EFFICIENCY;
GRAPHENE;
D O I:
10.1016/j.chemphys.2024.112437
中图分类号:
O64 [物理化学(理论化学)、化学物理学];
学科分类号:
070304 ;
081704 ;
摘要:
The remarkable potential of double perovskite materials, characterized by lead-free, non-toxic attributes and robust dynamical stability, positions them as highly promising candidates for both thermoelectric and optoelectronic applications. In light of this, a comprehensive investigation is undertaken through density functional theory to thoroughly explore the optoelectronic and transport characteristics of Cs2LiBiX6 (X = Br, I) double perovskite materials. To ascertain dynamic stability, phonon dispersion band structures are computed, and the structural stability is evaluated through the tolerance factor. The resulting band structures reveal narrow band gaps of 3.45 eV and 1.79 eV for the Br and Indium-based DPs, respectively. These narrow band gaps hold significant importance for applications such as ultraviolet detectors and other optoelectronic devices that function in the visible and UV-light spectrum. Notably, absorption peaks of maximal intensity emerge at 5.1 eV (76 nm) and 4.0 eV (67 nm) for the Br and Indium-based double perovskites, respectively. Furthermore, a comprehensive analysis of thermoelectric behavior is conducted, encompassing the figure of merit, power factor, Seebeck coefficient, and the ratio of electrical to thermal conductivity across a temperature range of 50-800 K. The exceptionally low lattice vibration values, coupled with a substantial enhancement in the thermoelectric figure of merit (ZT), notably underscore their significance for advanced thermoelectric generator applications.
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页数:10
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