Characterisation of power transistors for wireless network applications using passive and active load-pull

被引：0
|
作者：
Singh, Dilbagh [1 ]
Salter, Martin [1 ]
Ridler, Nick [1 ]
机构：
[1] Natl Phys Lab, Electromagnet & Electrochem Technol, Teddington, Middx, England
来源：
2024 IEEE INTERNATIONAL SYMPOSIUM ON MEASUREMENTS & NETWORKING, M & N 2024 | 2024年
关键词：
Wireless network; RF measurement; power amplifier; power transistor;
D O I：
10.1109/MN60932.2024.10615466
中图分类号：
TP39 [计算机的应用];
学科分类号：
081203 ; 0835 ;
摘要：
Power transistors are important devices in the transmit chains of wireless communication networks. In this paper, two methods are discussed for the characterisation of power transistors namely passive and active load-pull. The load impedance at the output of the transistor is swept over a region of the Smith chart to find the load conditions which optimize various characteristics of the transistor which are critical for the overall effectiveness and efficiency of the wireless network. In passive load-pull, the load impedance is controlled using a mechanical tuner whereas in active load-pull it is controlled by signal injection. Results obtained from applying the two methods to the testing of a Gallium Nitride (GaN) power transistor are discussed in detail at several frequencies.
引用
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页数：5
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