Topological surface states of semimetal TaSb2

被引:0
|
作者
Lee, Ji-Eun [1 ,2 ,3 ]
Liu, Yu [4 ,5 ,6 ]
Hwang, Jinwoong [7 ,8 ]
Hwang, Choongyu [9 ]
Petrovic, Cedomir [6 ,10 ]
Park, Se Young [11 ,12 ,13 ]
Ryu, Hyejin [2 ]
Mo, Sung-Kwan [1 ]
机构
[1] Lawrence Berkeley Natl Lab, Adv Light Source, Berkeley, CA 94720 USA
[2] Korea Inst Sci & Technol KIST, Ctr Spintron, Seoul 02792, South Korea
[3] Pohang Univ Sci & Technol, Max Planck POSTECH Ctr Complex Phase Mat, Pohang 37673, South Korea
[4] Zhejiang Univ, Ctr Correlated Matter, Hangzhou 310058, Peoples R China
[5] Zhejiang Univ, Sch Phys, Hangzhou 310058, Peoples R China
[6] Brookhaven Natl Lab, Condensed Matter Phys & Mat Sci Dept, Upton, NY 11973 USA
[7] Kangwon Natl Univ, Dept Phys, 1 Gangwondaehak Gil, Chuncheon Si 24341, Gangwon Do, South Korea
[8] Kangwon Natl Univ, Inst Quantum Convergence Technol, Chunchon 24341, South Korea
[9] Pusan Natl Univ, Dept Phys, Pusan 46241, South Korea
[10] Shanghai Adv Res Phys Sci SHARPS, Shanghai Key Lab Mat Frontiers Res Extreme Environ, Pudong 201203, Shanghai, Peoples R China
[11] Soongsil Univ, Dept Phys, Seoul 06978, South Korea
[12] Soongsil Univ, Origin Matter & Evolut Galaxies OMEG Inst, Seoul 06978, South Korea
[13] Soongsil Univ, Integrat Inst Basic Sci, Seoul 06978, South Korea
来源
NANO CONVERGENCE | 2024年 / 11卷 / 01期
基金
新加坡国家研究基金会;
关键词
Topological materials; Electronic structures; TaSb2; Resistivity plateau; Extremely large magnetoresistance; RESOLVED PHOTOEMISSION-SPECTROSCOPY;
D O I
10.1186/s40580-024-00457-y
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Topological surface states, protected by the global symmetry of the materials, are the keys to understanding various novel electrical, magnetic, and optical properties. TaSb2 is a newly discovered topological material with unique transport phenomena, including negative magnetoresistance and resistivity plateau, whose microscopic understanding is yet to be reached. In this study, we investigate the electronic band structure of TaSb2 using angle-resolved photoemission spectroscopy and density functional theory. Our analyses reveal distinct bulk and surface states in TaSb2, providing direct evidence of its topological nature. Notably, surface states predominate the electronic contribution near the Fermi level, while bulk bands are mostly located at higher binding energies. Our study underlines the importance of systematic investigations into the electronic structures of topological materials, offering insights into their fundamental properties and potential applications in future technologies.
引用
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页数:8
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