Heterogeneously Integrated InP Electro-Absorption Modulator for Beyond 300 Gbs Optical Links

被引:0
|
作者
Ostrovskis, Armands [1 ,2 ]
Szczerba, Krzysztof [3 ]
Salgals, Toms [1 ]
Norberg, Erik [3 ]
Koenigsmann, Michael [2 ]
Sonkoly, John [3 ]
Rubuls, Kristaps [1 ]
Yun, Han [3 ]
Krueger, Benjamin [2 ]
Piels, Molly [3 ]
Sedulis, Arvids [1 ]
Pittala, Fabio [2 ]
Spolitis, Sandis [1 ]
Gruen, Markus [2 ]
Louchet, Hadrien [2 ]
Jahn, Robert [2 ]
Yamaguchi, Kazuo [2 ]
Bobrovs, Vjaceslavs [1 ]
Pang, Xiaodan [1 ,4 ,5 ]
Guzzon, Robert [3 ]
Ozolins, Oskars [1 ,4 ,5 ]
机构
[1] Riga Tech Univ, Inst Photon Elect & Telecommun, LV-1048 Riga, Latvia
[2] Keysight Technol GmbH, D-71034 Boblingen, Germany
[3] OpenLight Photon, Goleta, CA 93117 USA
[4] RISE Res Inst Sweden, S-16440 Kista, Sweden
[5] KTH Royal Inst Technol, Dept Appl Phys, S-10691 Stockholm, Sweden
基金
瑞典研究理事会;
关键词
Index Terms-200 Gb/s per lane; electro-absorption modulator; heterogeneous integration; optical interconnects; silicon photonics;
D O I
10.1109/JLT.2025.3526822
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The recent AI boom requires more focus on energy-efficient and scalable optical interconnects. Silicon Photonics is enabling technology to satisfy growing demand. However, the lack of lasers and high-performance modulators hinders wide-scale adoption. Therefore, we present a heterogeneously integrated Indium Phosphide electro-absorption modulator with Silicon waveguides. We demonstrate up to 256 Gb/s on-off keying, 340 Gb/s 4-level pulse amplitude modulation, 375 Gb/s 6-level pulse amplitude modulation, and 360 Gb/s 8-level pulse amplitude modulation transmission over 500 m and 6 km of single-mode fiber with performance satisfying requirements of 6.25% overhead hard-decision forward error correction threshold of 4.5x10(-3). Additionally, we investigate the modulator at 200 Gb/s per lane scenarios, demonstrating excellent performance with a simple seven-tap feed-forward equalizer.
引用
收藏
页码:1826 / 1836
页数:11
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