Heterogeneously Integrated InP Electro-Absorption Modulator for Beyond 300 Gbs Optical Links

The recent AI boom requires more focus on energy-efficient and scalable optical interconnects. Silicon Photonics is enabling technology to satisfy growing demand. However, the lack of lasers and high-performance modulators hinders wide-scale adoption. Therefore, we present a heterogeneously integrated Indium Phosphide electro-absorption modulator with Silicon waveguides. We demonstrate up to 256 Gb/s on-off keying, 340 Gb/s 4-level pulse amplitude modulation, 375 Gb/s 6-level pulse amplitude modulation, and 360 Gb/s 8-level pulse amplitude modulation transmission over 500 m and 6 km of single-mode fiber with performance satisfying requirements of 6.25% overhead hard-decision forward error correction threshold of 4.5x10(-3). Additionally, we investigate the modulator at 200 Gb/s per lane scenarios, demonstrating excellent performance with a simple seven-tap feed-forward equalizer.