A 3D buffer memory for AI and machine learning

被引：0
|
作者：
Maarten Rosmeulen [1 ]
机构：
[1] imec,
来源：
Nature Reviews Electrical Engineering | 2025年 / 2卷 / 2期
关键词：
D O I：
10.1038/s44287-024-00138-2
中图分类号：
学科分类号：
摘要：
The recent introduction of the compute express link (CXL) memory interface provides opportunities for new memories to complement dynamic random-access memory (DRAM) in data-intensive compute applications. Research at imec shows that a 3D-integrated charge-coupled-device (CCD)-based memory with IGZO conduction channel is an excellent candidate.
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页码：75 / 76
页数：1
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