Laser-Modified Arsenic Sulfide Vitreous Semiconductor Films: Structural Properties and Photoluminescence Changes

被引：0
|
作者：
D. Shuleiko [1 ]
E. Kuzmin [2 ]
P. Pakholchuk [2 ]
I. Budagovsky [2 ]
D. Pepelyaev [3 ]
E. Konstantinova [1 ]
S. Zabotnov [1 ]
P. Kashkarov [1 ]
A. Kolobov [4 ]
S. Kozyukhin [3 ]
机构：
[1] Faculty of Physics,
[2] Moscow State Universitys,undefined
[3] Lebedev Physical Institute,undefined
[4] Russian Academy of Sciences,undefined
[5] Kurnakov Institute of General and Inorganic Chemistry,undefined
[6] Russian Academy of Sciences,undefined
[7] Institute of Physics,undefined
[8] Herzen State Pedagogical University of Russia,undefined
来源：
Bulletin of the Russian Academy of Sciences: Physics | 2024年 / 88卷 / Suppl 3期
关键词：
arsenic sulfide; chalcogenide vitreous semiconductors; spin-coating; structural modification; laser irradiation; photoluminescence;
D O I：
10.1134/S1062873824709966
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：S428 / S432
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