Simulation of MHD-Influence on Silicon Melt Flow in the Czochralski Process

被引：0
|
作者：
N. A. Verezub [1 ]
A. I. Prostomolotov [1 ]
机构：
[1] Ishlinsky Institute for Problems in Mechanics of the Russian Academy of Sciences,
来源：
Russian Microelectronics | 2024年 / 53卷 / 8期
关键词：
crystal growth; magnetic hydrodynamics; modeling;
D O I：
10.1134/S1063739724700987
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：803 / 809
页数：6
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