Resistive Switching Characteristics of NiO Thin Films Influenced by Changes in the Diameter of Nanometer-Scale Top Electrodes

We investigated the forming, set, and reset voltages affected by the area of the top electrodes of a resistive random access memory (RRAM) capacitor fabricated by epitaxial NiO thin films. NiO RRAM capacitors with Au top electrode with a diameter of 100 mu m showed typical unipolar switching characteristics. Au top electrodes with diameters of 10, 20, and 30 nm were formed on the surface of epitaxial NiO thin films by e-beam lithography. The forming, set, and reset voltages tended to decrease as the diameter of NiO RRAM capacitors with nanosized Au top electrodes decreased. As the area of the Au top electrodes increases, the volume of space in which the conductive filaments formed within the NiO RRAM capacitors can be formed becomes larger. This causes the conductive filament to be formed at relatively low energy, giving low forming voltages, while increasing the diversity of paths, causing a wide forming voltage distribution.