Searching for a two-dimensional silver bullet

被引：0
|
作者：
Lin, Dennis H. C. [1 ]
de la Rosa, Cesar Javier Lockhart [1 ]
机构：
[1] Imec, Leuven, Belgium
来源：
NATURE MATERIALS | 2025年 / 24卷 / 04期
关键词：
D O I：
10.1038/s41563-025-02178-x
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Two-dimensional-materials-based gate-all-around field-effect transistors are demonstrated at the wafer scale using the high-mobility two-dimensional semiconductor Bi2O2Se and its native oxide dielectric Bi2SeO5, enabling promising performance and energy efficiency for monolithic three-dimensional integrated circuits beyond silicon.
引用
收藏
页码：474 / 475
页数：2
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