Tunable interfacial properties of monolayer GeSb2Te4 on metal surfaces

Atomically thin monolayer (ML) GeSb2Te4 (GST) holds promising prospects in non-volatile memory applications because of its high non-homogeneous crystallization rate. In GST-based devices, the interaction between GST and metals is crucial, as it affects the electronic properties. Herein, based on first-principles calculations, we investigate the interaction and Schottky barrier height of contacts formed by the combination of ML GST with various metals. It is found that the interfaces of GST with Pt, Pd, Ir and W exhibit strong interaction, characterized by large binding energies ranging from 1.394 to 1.015 eV, and the interfaces between GST and Cu, Ag and Au display weak interaction. For the seven contacts, Ag and W form Ohmic contacts with ML GST, while Cu, Au, Pd, Ir, and Pt form n-type Schottky contacts, with Schottky barrier heights ranging from 0.029 to 0.353 eV. The strong Fermi level pinning at GST-metal interface is observed with a pinning factor of 0.378. Additionally, altering the interfacial distance and optimizing the layers of GST enable a transition from Ohmic contact to Schottky contact. These findings provide crucial guidance for the design and optimization of electronic devices based on phase change materials like GST.