Publisher Correction: Spin-transfer torque magnetoresistive random access memory technology status and future directions

被引：0
|
作者：
Daniel C. Worledge [1 ]
Guohan Hu [2 ]
机构：
[1] IBM Almaden Research Center,
[2] IBM T. J. Watson Research Center,undefined
来源：
Nature Reviews Electrical Engineering | 2025年 / 2卷 / 1期
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D O I：
10.1038/s44287-024-00123-9
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页码：71 / 71
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