1.56 kV/30 A vertical β-Ga2O3 Schottky barrier diodes with composite edge terminations

被引：2

作者：

Feng, Yitao ^{[1
]}

Zhou, Hong ^{[1
]}

Alghamdi, Sami ^{[2
]}

Fang, Hao ^{[3
]}

Zhang, Xiaorong ^{[3
]}

Chen, Yanbo ^{[3
]}

Tian, Guotao ^{[3
]}

Wasly, Saud ^{[2
]}

Hao, Yue ^{[1
]}

Zhang, Jincheng ^{[1
]}

机构：

[1] Xidian Univ, Sch Microelect, Key Lab Wide Band Gap Semicond Mat & Devices, Xian 710071, Peoples R China

[2] King Abdulaziz Univ, Ctr Excellence Intelligent Engn Syst CEIES, Jeddah 21589, Saudi Arabia

[3] China Resources Microelect Ltd, Wuxi 214061, Peoples R China

来源：

SCIENCE CHINA-INFORMATION SCIENCES | 2025年 / 68卷 / 02期

基金：

中国国家自然科学基金;

关键词：

RECTIFIER;

D O I：

10.1007/s11432-024-4204-9

中图分类号：

TP [自动化技术、计算机技术];

学科分类号：

0812 ;

摘要：

In conclusion, we have proposed a simple yet effective approach by implementing composite-ETs to regulate the E-field at the anode edge to enhance the BV of large-area vertical β-Ga2O3 SBDs. High BV = 1.56 kV @ IR < 100 µA and IF = 12 A @ VF = 2 V as well as IF = 30 A @ VF = 4.2 V are all simultaneously achieved. These results significantly outperform other high-current and high-voltage β-Ga2O3 SBDs and advance β-Ga2O3 research from the laboratory level to commercial products.

引用

页数：2

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