Effect of triangular pits on the mechanical behavior of 2D MoTe2: a molecular dynamics study

被引:1
|
作者
Aziz, Md Jobayer [1 ]
Islam, Md. Akibul [2 ]
Karim, Md. Rezwanul [1 ]
Bhuiyan, Arafat Ahmed [1 ]
机构
[1] Islamic Univ Technol IUT, Dept Mech & Prod Engn, Gazipur 1704, Bangladesh
[2] Univ Toronto, Dept Mech & Ind Engn, Toronto, ON, Canada
关键词
Molybdenum ditelluride; 2D materials; Triangle-shaped pit; Stress-strain behavior; Mechanical properties; Molecular dynamics; LAYER MOS2; GRAPHENE; BANDGAP; DISULFIDE; STRESS; 1T';
D O I
10.1007/s00894-024-06180-z
中图分类号
Q5 [生物化学]; Q7 [分子生物学];
学科分类号
071010 ; 081704 ;
摘要
ContextAmong two-dimensional (2D) materials, transition metal dichalcogenides (TMDs) stand out for their remarkable electronic, optical, and chemical properties. Their atomic thinness also imparts flexibility, making them ideal for flexible and wearable devices. However, our understanding of the mechanical characteristics of molybdenum ditelluride (MoTe2), particularly with defects such as pits, remains limited. Such defects, common in grown TMDs, degrade the mechanical properties and affect electronic and magnetic behaviors. This study uses molecular dynamics (MD) simulations of uniaxial and biaxial tensile loading performed on monolayer molybdenum ditelluride sheets of 2H phase containing triangular pits of varying vertex angles to investigate their fracture properties and visualize their crack propagation. From the stress-strain relationship, Young's modulus, fracture strain, ultimate tensile strength, and toughness for comparative analysis were calculated.MethodTensile loading simulations were performed in molecular dynamics (MD) software LAMMPS, using the Stillinger-Weber (SW) interatomic potential, under strain rate 108 s-1 at room temperature (300 K). From the stress-strain relationship obtained, we calculated Young's modulus, fracture strain, ultimate tensile strength, and toughness. Results showed that variations in pit edge length, angle, and perimeter significantly affected these properties in monolayer MoTe2. Regulated alteration of pit angle under constant simulation conditions resulted in improved uniaxial mechanical properties, while altering pit perimeters improved biaxial mechanical properties. Stress distribution was visualized using OVITO software. MoTe2 with pit defects was found to be more brittle than its pristine counterpart. This study provides foundational knowledge for advanced design strategies involving strain engineering in MoTe2 and similar TMDs.
引用
收藏
页数:18
相关论文
共 50 条
  • [21] Control-gate-free reconfigurable transistor based on 2D MoTe2 with asymmetric gating
    Zhao, Zijing
    Kang, Junzhe
    Rakheja, Shaloo
    Zhu, Wenjuan
    APPLIED PHYSICS LETTERS, 2024, 124 (07)
  • [22] Hexagonal MoTe2 with Amorphous BN Passivation Layer for Improved Oxidation Resistance and Endurance of 2D Field Effect Transistors
    Benjamin Sirota
    Nicholas Glavin
    Sergiy Krylyuk
    Albert V. Davydov
    Andrey A. Voevodin
    Scientific Reports, 8
  • [23] Saturable absorption in the C-Band employing 2D 1T'-MoTe2
    Volpato, Maria Carolina
    Rosa, Henrique G.
    de Assis, Pierre-Louis
    Frateschi, Newton Cesario
    2023 IEEE PHOTONICS CONFERENCE, IPC, 2023,
  • [24] Numerical Investigation of the Photogating Effect in MoTe2 Photodetectors
    Gonzalez-Medina, J. M.
    Marin, E. G.
    Toral-Lopez, A.
    Ruiz, F. G.
    Godoy, A.
    2019 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES (SISPAD 2019), 2019, : 156 - 157
  • [25] Strain-Enhanced Photovoltaic Effect in MoTe2
    Aftab, Sikandar
    Iqbal, Muhammad Zahir
    Iqbal, Muhammad Waqas
    Shehzad, Muhammad Arslan
    LASER & PHOTONICS REVIEWS, 2023, 17 (02)
  • [26] Double bow-tie antenna based 2D MoTe2 detector for terahertz wave detection
    Wang, Nian
    Liu, Xianchao
    Zhang, Zhiheng
    Wang, Jun
    AOPC 2022: OPTOELECTRONICS AND NANOPHOTONICS, 2022, 12556
  • [27] Exfoliated MoTe2 Field-Effect Transistor
    Fathipour, Sara
    Hwang, Wan Sik
    Kosel, Thomas
    Xing, Huili
    Haensch, Wilfried
    Jena, Debdeep
    Seabaugh, Alan
    2013 71ST ANNUAL DEVICE RESEARCH CONFERENCE (DRC), 2013, : 115 - +
  • [28] Polarized Photodetectors Based on 2D 2H-MoTe2/1T'-MoTe2/MoSe2 Van Der Waals Heterojunction
    Pan, Yuting
    Zhu, Lianqing
    Lu, Lidan
    Ou, Jianzhen
    Zhou, Jianhong
    An, Chunhua
    Dong, Mingli
    ADVANCED FUNCTIONAL MATERIALS, 2024, 34 (46)
  • [29] Ion-Induced Phase Changes in 2D MoTe2 Films for Neuromorphic Synaptic Device Applications
    Rupom, Rifat Hasan
    Jung, Moonyoung
    Pathak, Anil
    Park, Jeongmin
    Lee, Eunho
    Ju, Hyeon-Ah
    Kim, Young-Min
    Chyan, Oliver
    Kim, Jungkwun
    Suh, Dongseok
    Choi, Wonbong
    ACS NANO, 2025, 19 (02) : 2529 - 2539
  • [30] Investigating charge traps in MoTe2 field-effect transistors: SiO2 insulator traps and MoTe2 bulk traps
    Kim, Giheon
    Dang, Dang Xuan
    Gul, Hamza Zad
    Ji, Hyunjin
    Kim, Eun Kyu
    Lim, Seong Chu
    NANOTECHNOLOGY, 2024, 35 (03)