First-principles calculations for the effect of irradiation-induced point defects on the hydrogen dissolution and diffusion in γ-Al2O3

被引:0
|
作者
Pan, Xin-Dong [1 ]
Li, Xiao-Chun [2 ]
Wang, Jing [3 ]
Yu, Rongmei [1 ,2 ]
Pu, Chunying [1 ,2 ]
Zhou, Hai-Shan [4 ]
Luo, Guang-Nan [2 ,4 ]
机构
[1] Nanyang Normal Univ, Sch Phys Elect Engn, Nanyang 473061, Peoples R China
[2] Chinese Acad Sci, Hefei Inst Phys Sci, Inst Plasma Phys, Hefei 230031, Peoples R China
[3] Hefei Univ Technol, Sch Mat Sci & Engn, Hefei 270009, Peoples R China
[4] Univ Sci & Technol China, Hefei 230026, Peoples R China
基金
中国国家自然科学基金;
关键词
Irradiation defects; gamma-Al; 2; O; 3; Tritium permeation barrier; Hydrogen; PERMEATION BARRIER; DEUTERIUM PERMEATION; ALPHA-AL2O3; ALUMINA; STEEL; SURFACE; DAMAGE;
D O I
10.1016/j.nme.2025.101890
中图分类号
TL [原子能技术]; O571 [原子核物理学];
学科分类号
0827 ; 082701 ;
摘要
FeAl/Al2O3 is considered the most promising candidate material for tritium permeation barrier (TPB) due to numerous advantages. gamma-Al2O3 phase structure is commonly found in FeAl/Al2O3, and is crucial to its effectiveness. In fusion reactors, high-energy neutrons generate a large number of irradiation-induced defects, significantly affecting the performance of gamma-Al2O3. The underlying mechanism is still unclear. This study focuses on the influence of irradiation-induced point defects on the dissolution and diffusion of H in gamma-Al2O3 using firstprinciples theory. Our results show that the irradiation-induced point defect exhibit a strong ability to capture dissolved H atoms, leading to higher hydrogen retention. When dissolved H atoms are captured by vacancy-type defects, the diffusion barrier becomes so high that isolated vacancy-type irradiation-induced point defects can hinder the diffusion of H atoms. This in turn enhances the effectiveness of TPB in preventing H permeation. Furthermore, the impediment effect of Al vacancies on H diffusion in gamma-Al2O3 is higher than that in alpha-Al2O3, whereas O vacancies have the opposite effect, impeding H diffusion in gamma-Al2O3 less than in alpha-Al2O3. However, the diffusion barrier of O interstitial atoms and H as a bound entity is only 0.11 eV, which is even far lower than that in alpha-Al2O3 (0.44 eV). Therefore, O interstitial atoms can accelerate the diffusion process of H, which can reduce the efficiency of protection against H permeation through gamma-Al2O3 TPB. The accelerating effect in gamma-Al2O3 is higher than that in alpha-Al2O3. These findings provide valuable insights into the influence of irradiation-induced point defects on H behavior in gamma-Al2O3, which is essential for improving the efficiency of FeAl/Al2O3 tritium permeation barriers.
引用
收藏
页数:10
相关论文
共 50 条
  • [41] Investigation of the GaN/Al2O3 Interface by First Principles Calculations
    Chokawa, Kenta
    Kojima, Eiji
    Araidai, Masaaki
    Shiraishi, Kenji
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2018, 255 (04):
  • [42] First-principles study of point defects in Ni3Al
    Ruban, Andrei V.
    Popov, V. A.
    Portnoi, V. K.
    Bogdanov, V. I.
    PHILOSOPHICAL MAGAZINE, 2014, 94 (01) : 20 - 34
  • [43] First-principles calculations on magnetic properties of interface-rippled Co/α-Al2O3/Co
    Kim, C
    Chung, YC
    APPLIED PHYSICS LETTERS, 2006, 88 (13)
  • [44] Temperature-dependent elastic stiffness constants of α- and θ-Al2O3 from first-principles calculations
    Shang, Shun-Li
    Zhang, Hui
    Wang, Yi
    Liu, Zi-Kui
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2010, 22 (37)
  • [45] Electronic and optical properties of Ti3+ doped α-Al2O3 crystals: First-principles calculations
    Zhang, Jihua
    Ding, Jianwen
    Zhang, Yunli
    SOLID STATE COMMUNICATIONS, 2009, 149 (29-30) : 1188 - 1192
  • [46] First-principles study of grain boundary sliding in α-Al2O3
    Nakamura, Kaoru
    Mizoguchi, Teruyasu
    Shibata, Naoya
    Matsunaga, Katsuyuki
    Yamamoto, Takahisa
    Ikuhara, Yuichi
    PHYSICAL REVIEW B, 2007, 75 (18)
  • [47] First-Principles Studies of NOx Chemistry on Agn/α-Al2O3
    Hellman, Anders
    Gronbeck, Henrik
    JOURNAL OF PHYSICAL CHEMISTRY C, 2009, 113 (09): : 3674 - 3682
  • [48] Diffusion of point defects near stacking faults in 3C-SiC via first-principles calculations
    Xi, Jianqi
    Liu, Bin
    Yuan, Fenglin
    Zhang, Yanwen
    Weber, William J.
    SCRIPTA MATERIALIA, 2017, 139 : 1 - 4
  • [49] IRRADIATION-INDUCED AGGREGATE CENTERS IN SINGLE-CRYSTAL AL2O3
    ATOBE, K
    NISHIMOTO, N
    NAKAGAWA, M
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1985, 89 (01): : 155 - 162
  • [50] First-principles study of the effect of S impurity on the adhesion of Fe/Al2O3 interface
    Tang Jie
    Zhang Guo-Ying
    Bao Jun-Shan
    Liu Gui-Li
    Liu Chun-Ming
    ACTA PHYSICA SINICA, 2014, 63 (18)