Cold Sintered ZnO-Polystyrene (PS) Composites with Modified Interfacial Structures and Properties

Lightweight and integrated electronic devices with high performance have become an inevitable trend in the development of power electronic systems. However, it is challenging to obtain lightweight and miniaturized varistors due to the low threshold electric field. Herein, (1 - x)ZnO-xPS composites with a high threshold electric field are prepared through a cold sintering process at 220 degrees C for 50 min, utilizing lightweight PS to modulate the grain boundary structures of ZnO varistors. With PS content <= 1.5 wt %, the relative densities of cold sintered composites exceed 95%. PS thin layers with a thickness of 2-10 nm are distributed at the grain boundaries of ZnO, forming the Schottky barrier, which triggers nonlinear current-voltage responses. With the addition of PS, the threshold electric field is dramatically enhanced from 135 to 2703 V<middle dot>mm-1, higher than that of commercial ZnO varistors, which is further demonstrated by the electric field simulation of the Finite Element Method. The interfacial resistance obtained from impedance analysis increases with the increase of the PS content, and the activation energy of (1 - x)ZnO-xPS composites is higher than that of pure ZnO ceramics. This study provides a promising approach for the development of lightweight and cost-effective varistor materials.