In Situ Construction of Ultra-Stable CsPbX3/DMSNs-NH2 Nanocomposites for White Light-Emitting Devices

被引:0
|
作者
Li, Xin [1 ]
Ma, Qi-Wen [1 ]
Yu, Guangning [1 ]
Shi, Ji [1 ]
Chang, Hai-Yang [2 ]
Zheng, Rong-Rong [1 ]
Xiang, Hengxue [3 ]
Wang, Cheng [4 ]
机构
[1] Shenyang Univ Technol, Sch Petrochem Engn, Liaoyang 110870, Peoples R China
[2] Jieyang Ctr, Guangdong Prov Lab Chem & Fine Chem Engn, Jieyang 522000, Peoples R China
[3] Donghua Univ, Coll Mat Sci & Engn, State Key Lab Modiffcat Chem Fibers & Polymer Mat, Shanghai 201620, Peoples R China
[4] Guangdong Univ Technol, Sch Chem Engn & Light Ind, Guangzhou 510006, Peoples R China
基金
中国国家自然科学基金;
关键词
perovskite; nanocrystal; silica; light-emittingdiode; nanocomposites; PEROVSKITE QUANTUM DOTS; NANOCRYSTALS; LUMINESCENT;
D O I
10.1021/acsanm.4c05252
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
All-inorganic halide perovskite (CsPbX3) nanocrystals (NCs) have garnered significant attention due to their excellent photoelectric properties. However, their practical application has been limited by stability issues. This study presents a strategy combining physical confinement through a carrier matrix and chemical bond coupling to enhance the stability of CsPbX3 NCs significantly under UV irradiation, polar solvents, and thermal conditions. Specifically, CsPbBr3 NCs exhibited near-complete fluorescence quenching within 300 min when treated with water and ethanol. In contrast, CsPbBr3/DMSNs-NH2 nanocomposites retained 86.9% and 75.4% of their initial photoluminescence intensity after 7 days. This enhanced stability is attributed to the multilevel pore architecture of DMSNs-NH2, which effectively prevents direct interaction with water and oxygen. Furthermore, bright white light-emitting diode (LED) devices were successfully fabricated using these nanocomposites, achieving a color temperature of 6045 K and a color gamut covering 133.5% of NTSC and 99% of Rec.2020 standards. This work demonstrates a promising pathway for the development of stable, high-performance perovskite-based optoelectronic devices.
引用
收藏
页码:27254 / 27263
页数:10
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