Exploring Resilience of LPDRAM Against RowHammer

被引：0
|
作者：
Kaur, Anandpreet [1 ]
Srivastav, Pravin [1 ]
Ghoshal, Bibhas [1 ]
机构：
[1] Indian Inst Informat Technol Allahabad, Allahabad 211012, Uttar Pradesh, India
来源：
IEEE DESIGN & TEST | 2025年 / 42卷 / 01期
关键词：
D O I：
10.1109/MDAT.2024.3453197
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
Editor’s notes: This article investigates, for the first time, how RowHammer attacks impact LPDRAM memories. The findings reveal that RowHammer causes bit flips at specific memory locations, which facilitates more predictable attacks.—Kanad Basu, University of Texas at Dallas, USA © 2024 IEEE.
引用
收藏
页码：39 / 46
页数：8
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