Hybrid High-Power AlGaN/CdZnO/GaN/AlGaN HEMT with High Breakdown Voltage

被引：0
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作者：
Kim, Bonghwan [1 ]
Park, Seung-Hwan [1 ]
机构：
[1] Department of Semiconductor Electronic Engineering, Daegu Catholic University, Gyeongbuk, Gyeongsan,38430, Korea, Republic of
来源：
Materials | 2024年 / 17卷 / 22期
关键词：
D O I：
10.3390/ma17225560
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学科分类号：
摘要：
27
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