Highly efficient In(I) doped Cs3Cu2I5 single crystals for light-emitting diodes and gamma spectroscopy applications

被引:1
|
作者
Wen X. [1 ,2 ]
Gao Q. [1 ,2 ]
Wang Q. [1 ]
Chewpraditkul W. [3 ]
Korjik M. [4 ]
Kurosawa S. [5 ]
Buryi M. [6 ]
Babin V. [7 ]
Wu Y. [1 ,2 ]
机构
[1] Shanghai Institute of Ceramics, Chinese Academy of Sciences, 585 He-shuo Road, Shanghai
[2] Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing
[3] Department of Physics, King Mongkut's University of Technology Thonburi, Thung-Khru, Bangkok
[4] Institute for Nuclear Problems of Belarus State University, 11 Bobruiskaya, Minsk
[5] NICHe, Tohoku University, 6-6-10 Aza-Aoba, Aramaki, Aoba-ku, Miyagi, Sendai
[6] Institute of Plasma Physics of the Czech Academy of Sciences, U Slovanky 2525/1a, Prague
[7] FZU - Institute of Physics of the Czech Academy of Sciences, Prague
来源
Optical Materials: X | 2024年 / 23卷
基金
上海市自然科学基金; 中国国家自然科学基金;
关键词
All Open Access; Gold;
D O I
10.1016/j.omx.2024.100335
中图分类号
学科分类号
摘要
High-quality Cs3Cu2I5:In single crystals with a 7 mm diameter were grown by using the vertical Bridgman method. These crystals have a high optical transmittance (>75 %) and emit a bright red-orange light under both UV and X-ray irradiation. The Cs3Cu2I5:In crystals can exhibit a high photoluminescence quantum efficiency (PLQY) of 79.5 %, thus we explored the potential applications for light-emitting diodes (LED). The fabricated LED demonstrated CIE color coordinates of (0.553, 0.431) with a color rendering index (Ra) of 77, making it suitable for supplementary light in plant growth. Moreover, we evaluated their gamma-ray spectroscopy capability by using an avalanche photodiode (APD) detector. Under 137Cs gamma-ray irradiation, the gamma scintillation yield and energy resolution gradually degraded as the In concentration increased, which can be attributed to an enhanced afterglow after In doping. © 2024 The Author(s)
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