Field-Free Perpendicular Magnetization Switching of SOT-MRAM Devices by Magnetic Spin Hall Effect

被引：0
|
作者：
Pruckner, B. [2 ]
Jørstad, N. [2 ]
Hádamek, T. [2 ]
Goes, W. [1 ]
Selberherr, S. [3 ]
Sverdlov, V. [2 ,3 ]
机构：
[1] Silvaco Europe Ltd., Compass Point, Cambridge, St Ives,PE27 5JL, United Kingdom
[2] Christian Doppler Laboratory For Nonvolatile Magnetoresistive Memory And Logic, Austria
[3] Institute For Microelectronics, Tu Wien, Gußhausstraße 27-29, Wien,A-1040, Austria
来源：
2024 47th ICT and Electronics Convention, MIPRO 2024 - Proceedings | 2024年
关键词：
Compilation and indexing terms; Copyright 2025 Elsevier Inc;
D O I：
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中图分类号：
学科分类号：
摘要：
Antiferromagnetic materials - Binary alloys - Cobalt alloys - Cobalt compounds - Crystal symmetry - Magnetic recording - Magnetization - MRAM devices - Spin dynamics - Tunnel junctions
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页码：1584 / 1589
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