Low-temperature fabrication of amorphous carbon films as a universal template for remote epitaxy

被引：0

作者：

Henksmeier, T. ^{[1
,2
]}

Mahler, P. ^{[1
]}

Wolff, A. ^{[1
]}

Deutsch, D. ^{[1
]}

Voigt, M. ^{[3
]}

Ruhm, L. ^{[3
]}

Sanchez, A.M. ^{[4
]}

As, D.J. ^{[1
]}

Grundmeier, G. ^{[3
]}

Reuter, D. ^{[1
,2
]}

机构：

[1] Department of Physics and Center for Optoelectronics and Photonics Paderborn (CeOPP), Paderborn University, Paderborn, Germany

[2] Institute for Photonic Quantum Systems (PhoQS), Paderborn University, Paderborn, Germany

[3] Department of Chemistry, Paderborn University, Paderborn, Germany

[4] Department of Physics, Warwick University, Coventry, United Kingdom

来源：

Communications Materials | 2024年 / 5卷 / 01期

关键词：

Compendex;

D O I：

10.1038/s43246-024-00718-7

中图分类号：

学科分类号：

摘要：

III-V semiconductors

引用

共 50 条

[21] Low-Temperature Magnetotransport and Magnetic Properties of Cobalt-Doped Amorphous Carbon Thin Films
Tang Ruihe
Liu Wei
Zhang Zhengjun
Yu Ronghai
Liu Xiaofang
Yang Bai
Masaki, Mizuguchi
Koki, Takanashi
RARE METAL MATERIALS AND ENGINEERING, 2012, 41 (11) : 1887 - 1890
[22] Doping of Si thin films by low-temperature molecular beam epitaxy
1600, (73):
[23] ELECTROPHYSICAL PROPERTIES OF CADMIUM TELLURIDE FILMS SYNTHESIZED BY LOW-TEMPERATURE EPITAXY
BELYAEV, AP
RUBETS, VP
MURAVYOVA, KK
KALINKIN, IP
IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1989, 32 (07): : 114 - 115
[24] Low-temperature grown graphene films by using molecular beam epitaxy
Lin, Meng-Yu
Guo, Wei-Ching
Wu, Meng-Hsun
Wang, Pro-Yao
Liu, Te-Huan
Pao, Chun-Wei
Chang, Chien-Cheng
Lee, Si-Chen
Lin, Shih-Yen
APPLIED PHYSICS LETTERS, 2012, 101 (22)
[25] Low-temperature fabrication technologies of Si solar cell by sputter epitaxy method
Fujimura, Sohei
Someya, Takahiro
Yoshiba, Shuhei
Tsukamoto, Takahiro
Kamisako, Koichi
Suda, Yoshiyuki
JAPANESE JOURNAL OF APPLIED PHYSICS, 2015, 54 (08)
[26] Low-temperature fabrication technologies of Si solar cell by sputter epitaxy method
Graduate School of Engineering, Tokyo University of Agriculture and Technology, Koganei, Tokyo
184-8588, Japan
Jpn. J. Appl. Phys., 8
[27] Plasmas for the low-temperature growth of high-quality GaN films by molecular beam epitaxy and remote plasma MOCVD
Losurdo, M
Capezzuto, P
Bruno, G
Namkoong, G
Doolittle, WA
Brown, AS
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 2002, 190 (01): : 43 - 51
[28] Amorphous carbon-promoted low-temperature crystallization of silica
Okabe, A
Niki, M
Fukushima, T
Aida, T
CHEMISTRY LETTERS, 2006, 35 (02) : 228 - 229
[29] LOW-TEMPERATURE CRYSTALLIZATION OF SPUTTERED CARBON-FILMS
YANEZLIMON, JM
RUIZ, F
GONZALEZHERNANDEZ, J
CHAO, BS
OVSHINSKY, SR
JOURNAL OF APPLIED PHYSICS, 1995, 78 (05) : 3015 - 3019
[30] Production and properties of low-temperature tetrahedral carbon films
A. F. Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021 St. Petersburg, Russia
J. Wide Bandgap Mater., 2 (117-124):

← 1 2 3 4 5 →