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Intrinsic and Extrinsic Photogalvanic Effects in Twisted Bilayer Graphene
被引:0
|作者:
Peñaranda, Fernando
[1
]
Ochoa, Héctor
[2
]
De Juan, Fernando
[1
,3
]
机构:
[1] Donostia International Physics Center, Paseo Manuel de Lardizabal 4, Donostia-San Sebastian,20018, Spain
[2] Department of Physics, Columbia University, New York,NY,10027, United States
[3] IKERBASQUE, Basque Foundation for Science, Maria Diaz de Haro 3, Bilbao,48013, Spain
关键词:
Band inversion - Bilayer Graphene - Extrinsic effects - Gate potentials - Intrinsic effects - Lattice structures - Magic angle - Normal incidence - Photogalvanic effects - Twisted bilayers;
D O I:
10.1103/PhysRevLett.133.256603
中图分类号:
学科分类号:
摘要:
The chiral lattice structure of twisted bilayer graphene with D6 symmetry allows for intrinsic photogalvanic effects only at off-normal incidence, while additional extrinsic effects are known to be induced by a substrate or a gate potential. In this Letter, we first compute the intrinsic effects and show they reverse sign at the magic angle, revealing a band inversion at the Γ point. We next consider different extrinsic effects, showing how they can be used to track the strengths of the substrate coupling or electric displacement field. We also show that the approximate particle-hole symmetry implies stringent constraints on the chemical potential dependence of all photocurrents. A detailed comparison of intrinsic vs extrinsic photocurrents therefore reveals a wealth of information about the band structure and can also serve as a benchmark to constrain the symmetry breaking patterns of correlated states. © 2024 American Physical Society.
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