Intrinsic and Extrinsic Photogalvanic Effects in Twisted Bilayer Graphene

被引:0
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作者
Peñaranda, Fernando [1 ]
Ochoa, Héctor [2 ]
De Juan, Fernando [1 ,3 ]
机构
[1] Donostia International Physics Center, Paseo Manuel de Lardizabal 4, Donostia-San Sebastian,20018, Spain
[2] Department of Physics, Columbia University, New York,NY,10027, United States
[3] IKERBASQUE, Basque Foundation for Science, Maria Diaz de Haro 3, Bilbao,48013, Spain
关键词
Band inversion - Bilayer Graphene - Extrinsic effects - Gate potentials - Intrinsic effects - Lattice structures - Magic angle - Normal incidence - Photogalvanic effects - Twisted bilayers;
D O I
10.1103/PhysRevLett.133.256603
中图分类号
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摘要
The chiral lattice structure of twisted bilayer graphene with D6 symmetry allows for intrinsic photogalvanic effects only at off-normal incidence, while additional extrinsic effects are known to be induced by a substrate or a gate potential. In this Letter, we first compute the intrinsic effects and show they reverse sign at the magic angle, revealing a band inversion at the Γ point. We next consider different extrinsic effects, showing how they can be used to track the strengths of the substrate coupling or electric displacement field. We also show that the approximate particle-hole symmetry implies stringent constraints on the chemical potential dependence of all photocurrents. A detailed comparison of intrinsic vs extrinsic photocurrents therefore reveals a wealth of information about the band structure and can also serve as a benchmark to constrain the symmetry breaking patterns of correlated states. © 2024 American Physical Society.
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