Impact of Total Ionizing Dose on Radio Frequency Performance of 22 nm Fully Depleted Silicon-On-Insulator nMOSFETs

被引：1

作者：

Yan, Zhanpeng ^{[1
]}

Liu, Hongxia ^{[1
]}

Huang, Menghao ^{[1
]}

Wang, Shulong ^{[1
]}

Chen, Shupeng ^{[1
]}

Zhou, Xilong ^{[1
]}

Huang, Junjie ^{[1
]}

Liu, Chang ^{[2
]}

机构：

[1] Xidian Univ, Sch Microelect, Key Lab Wide Band Gap Semicond Mat & Devices Educ, Xian 710071, Peoples R China

[2] China Elect Prod Reliabil & Environm Testing Res I, Sci & Technol Reliabil Phys & Applicat Technol Ele, Guangzhou 511370, Peoples R China

来源：

MICROMACHINES | 2024年 / 15卷 / 11期

基金：

中国国家自然科学基金;

关键词：

fully depleted silicon-on-insulator (FD-SOI); RF (radio frequency); total ionizing dose (TID); <italic>fmax</italic> (maximum oscillation frequency); <italic>fT</italic> (cut-off frequency);

D O I：

10.3390/mi15111292

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

In this paper, the degradation mechanism of the RF performance of 22 nm fully depleted (FD) silicon-on-insulator nMOSFETs at different total ionizing dose levels has been investigated. The RF figures of merit (the cut-off frequency fT, maximum oscillation frequency fmax) show significant degradation of approximately 14.1% and 6.8%, respectively. The variation of the small-signal parameters (output conductance (gds), transconductance (gm), reflection coefficient (|Gamma in|), and capacitance (Cgg)) at different TID levels has been discussed. TID-induced trapped charges in the gate oxide and buried oxide increase the vertical channel field, which leads to more complex degradation of small-signal parameters across a wide frequency range.

引用

页数：13

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