Metal-insulator transition in a correlated bilayer kagome model

被引：0
|
作者：
Hu, Cong [1 ]
Qu, Hongbin [1 ]
Zhang, Xuefeng [1 ]
Wang, Xiao-Qun [2 ]
Lin, Hai-Qing [2 ]
Li, Gang [1 ,3 ]
机构：
[1] School of Physical Science and Technology, ShanghaiTech University, Shanghai,201210, China
[2] School of Physics, Zhejiang University, Zhejiang, Hangzhou,310027, China
[3] ShanghaiTech Laboratory for Topological Physics, ShanghaiTech University, Shanghai,201210, China
来源：
Physical Review B | 2024年 / 110卷 / 23期
关键词：
Hubbard model;
D O I：
10.1103/PhysRevB.110.235144
中图分类号：
学科分类号：
摘要：
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