Dry Etching Characteristics of InGaZnO Thin Films Under Inductively Coupled Plasma–Reactive-Ion Etching with Hydrochloride and Argon Gas Mixture

被引：0
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作者：
Oh, Changyong [1 ]
Ju, Myeong Woo [2 ,3 ]
Jeong, Hojun [4 ]
Song, Jun Ho [4 ]
Kim, Bo Sung [2 ,3 ,4 ]
Lee, Dae Gyu [5 ]
Cho, ChoongHo [5 ]
机构：
[1] DRAM Process Architecture Team, Samsung Electronics, Hwaseong-si 18448, Gyeonggi-do, Korea, Republic of
[2] Department of Applied Physics, Korea University, Sejong,30019, Korea, Republic of
[3] E ICT-Culture Sports Track, Korea University, Sejong,30019, Korea, Republic of
[4] Division of Display and Semiconductor Physics, Korea University, Sejong,30019, Korea, Republic of
[5] Department of Computer Information Science, Korea University, Sejong,30019, Korea, Republic of
来源：
Materials | 2024年 / 17卷 / 24期
关键词：
Chlorine compounds;
D O I：
10.3390/ma17246241
中图分类号：
学科分类号：
摘要：
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