High Pulse Power 1550 Tunnel Junction Laser Diode

被引：0
|
作者：
Zhu, Jianping [1 ,2 ]
Dong, Fengxin [2 ]
Qu, Hongwei [2 ,3 ]
Zhou, Xuyan [2 ]
Fu, Ting [2 ]
Zhang, Weiqiao [2 ]
Xu, Chuanwang [2 ]
Li, Xiangqian [1 ,2 ]
Ge, Lijun [1 ,2 ]
Liu, Long [2 ,4 ]
Cheng, Weiqian [1 ,2 ]
机构：
[1] School of Physics and Physical Engineering, Qufu Normal Univ., 57, Jingxuan West Road, Shandong, Qufu,273165, China
[2] Weifang Academy of Advanced Opto-Electronic Circuits, 195 Industrial 1st Street, Shandong, Weifang,261000, China
[3] Laboratory of Solid State Optoelectronics Information Technology, Institute of Semiconductors, CAS, 35A Qinghua East Road, Haidian District, Beijing,100083, China
[4] College of Physics and Electronic Science, Shandong Normal Univ., 1 Changqing University Science Park University Road, Shandong, Jinan,250358, China
来源：
Proceedings of SPIE - The International Society for Optical Engineering | 2024年 / 13418卷
关键词：
Cavity length - High power - High pulse power - Quantum-wells - Slope efficiencies - Spatial resolution - Strain compensation - Strain compensation quantum well - Technology development;
D O I：
134183Q
中图分类号：
学科分类号：
摘要：
15
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