Thin film lithium niobate electro-optic modulator with reduced half-wave voltage length product through design

This paper aims at shortening electrode spacing in a thin film lithium niobate (TFLN) electro-optic modulator (EOM) while avoiding an increase in metal absorption loss, thereby reducing the half-wave voltage length product (V pi <middle dot> L). Through numerical simulations, we find that metal absorption loss reaches its peak values when the optical modes of the metal-clad dielectric waveguide and ridged waveguide hybridize. This negative effect can be mitigated by adjusting the electrode width to modify the optical mode of the metal-clad dielectric waveguide. In addition, we raise the vertical position of the electrodes to further mitigate metal absorption loss and reduce the electrode spacing. By calculating the optimal buffer layer thickness for two crystal axis orientations, our findings reveal a 19% reduction in V pi <middle dot> L at conventional crystal axis orientation (9 = +/- 90 degrees) and a 16% decrease at unconventional crystal axis orientation (9 = 54 degrees). Notably, V pi <middle dot> L at unconventional crystal axis orientation is 5% lower than at conventional crystal axis orientation. These findings demonstrate the effectiveness of geometric configuration optimization toward enhancing the efficiency and performance of the TFLN EOM. (c) 2024 Optica Publishing Group. All rights, including for text and data mining (TDM), Artificial Intelligence (AI) training, and similar technologies, are reserved.