A True Random Number Generator Based on High-Speed Ag/a-Si/Pt Memristor

被引：0

作者：

Guo, Zhenqiang ^{[1
]}

Fang, Ziliang ^{[1
]}

Niu, Jiangzhen ^{[1
]}

Wang, Haiyun ^{[1
]}

Yan, Lei ^{[1
]}

Tong, Liang ^{[1
]}

Zhao, Jianhui ^{[1
]}

Yin, Saibo ^{[1
]}

Sun, Shiqing ^{[1
]}

Li, Feng ^{[2
]}

Wang, Hongfang ^{[2
]}

Chen, Jianhui ^{[1
]}

Yan, Xiaobing ^{[1
]}

机构：

[1] Hebei University, College of Physics Science and Technology, College of Electron and Information Engineering, Key Laboratory of Brain-Like Neuromorphic Devices and Systems of Hebei Province, Hebei, Baoding,071002, China

[2] Yingli Energy Development Company Ltd., Baoding,071002, China

来源：

IEEE Transactions on Electron Devices | 2024年 / 71卷 / 11期

关键词：

The inherent variability in memristor switching behavior has been a challenge to its adoption as a next-generation general-purpose memory. However; the randomness of its switching behavior may be helpful for hardware security applications. Herein; a true random number generator (TRNG) based on a high-speed Ag/amorphous-Si/Pt threshold switching (TS) device was constructed. The device possesses a large on-off ratio of about 105 and a fast switching speed of about 30 ns. The results show that the delay time of the device decreases as the pulse amplitude or the pulse frequency increases. Using the random delay time as a random source; we built a TRNG circuit and achieved the flipping of 0and 1with a fast bit generation rate of 48 kb/s. The random bits generated by our TRNG pass 14 randomness tests of the National Institute of Standards and Technology (NIST) without any processing. This work paves the way for diffusive memristors in hardware security applications in the era of the Internet of Things. © 1963-2012 IEEE;

D O I：

10.1109/TED.2024.3454588

中图分类号：

学科分类号：

摘要：

引用

页码：7126 / 7130

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