Light-Induced Artificial Synapse Integrated With AlGaN Quantum Well DUV Source for Neuromorphic Computing

被引:1
|
作者
Ye, Ziqi [1 ]
Bai, Jiangxiao [2 ]
Zhang, Hao [1 ]
Lu, Shunpeng [2 ]
Shi, Zhiming [2 ]
Sun, Xiaojuan [2 ]
Li, Dabing [2 ]
Wang, Yongjin [1 ,3 ]
机构
[1] Nanjing Univ Posts & Telecommun, GaN Optoelect Integrat Int Cooperat Joint Lab Jian, Nanjing 210003, Peoples R China
[2] Chinese Acad Sci, State Key Lab Luminescence & Applicat, Changchun Inst Opt Fine Mech & Phys, Changchun 130033, Peoples R China
[3] Suzhou Lighting Chip Monolith Optoelect Technol Co, Suzhou 215211, Peoples R China
基金
中国国家自然科学基金;
关键词
Synapses; Light sources; Biology; Wide band gap semiconductors; Aluminum gallium nitride; Neuromorphic engineering; Visual systems; AlGaN; artificial synapse; deep ultraviolet; on-chip integration;
D O I
10.1109/JLT.2024.3382577
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Artificial optoelectronic synapses, bio-inspired neuromorphic devices, are gaining prominence for their pivotal role in overcoming the von Neumann bottleneck in traditional computing. However, challenges remain in terms of integrability and compatibility. Here, we present a light-induced, single-chip artificial synapse integrated with a deep ultraviolet light source using an AlGaN quantum well structure. In such a synaptic device, excitation light, photogenerated carriers, and electrodes are used as action potentials, neurotransmitters, and pre-synaptic/post-synaptic membranes, respectively. The device exhibits favorable synaptic behaviors, such as excitatory postsynaptic current, paired pulse facilitation, and photoelectric potentiation-depression. Subsequently, an artificial neural network is simulated, achieving a maximum handwriting image recognition accuracy of 94.5$\%$. Such a device, integrating on-chip artificial synapse and light source, possesses significant integration potential, high compatibility, and demonstrates promising capabilities for application in neuromorphic visual systems.
引用
收藏
页码:7882 / 7887
页数:6
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