Study of the High-Temperature Sintering Characteristics of Boron Oxide Composite Silicon-Based Ceramics

被引：0
|
作者：
Sun, Jinchao [1 ]
Su, Yongxiang [1 ]
Zhao, Qingjuan [1 ]
Wang, Gui [1 ]
机构：
[1] Key Laboratory of Advanced Manufacturing and Automation Technology (Guilin University of Technology), Education Department of Guangxi Zhuang Autonomous Region, Guilin,541006, China
来源：
Applied Sciences (Switzerland) | 2024年 / 14卷 / 23期
关键词：
This paper explores the application of boron oxide (B2O3) as a sintering additive in silicon-based (SiO2) ceramics; focusing on its impact on the sintering process and resulting ceramic properties. Composite silicon-based ceramic shells with boron oxide content ranging from 0 to 4 Wt% were prepared using digital light processing (DLP) technology. This study examines the effects of boron oxide on sintering temperature; apparent porosity; shrinkage rates; and mechanical properties during high-temperature sintering. Experimental results indicate that; as boron oxide content increases; the shrinkage rate of the ceramic samples rises progressively; with shrinkage in the XY direction increasing from 4.57% to 16.40% and in the Z direction from 6.25% to 17.03%. Concurrently; the apparent porosity decreases with higher boron oxide content; ranging from a maximum of 36.17% to a minimum of 23.27%. Bulk density also improves from 1.49 g/cm3 to 1.78 g/cm3. The bending strength trend first rises and then declines; peaking at 15.39 MPa at a boron oxide content of 3 Wt%. X-ray Diffraction and Energy Dispersive Spectroscopy analyses confirm that the addition of boron oxide promotes the formation of beta-quartz and that its liquid-phase behavior at high temperatures aids in enhancing ceramic densification. This study demonstrates that an appropriate amount of boron oxide can effectively lower the sintering temperature of silicon-based ceramics while improving their mechanical properties; providing a theoretical foundation and practical basis for broader industrial applications. © 2024 by the authors;
D O I：
10.3390/app142311179
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