Impact of Polarization Field Architecture on Excitonic Properties of 2D Janus Homobilayers

被引:0
|
作者
Kopaczek, Jan [1 ,2 ]
Sayyad, Mohammed Y. [1 ]
Wu, Cheng-Lun [1 ]
Sailus, Renee [1 ]
Kudrawiec, Robert [2 ]
Tongay, Seth Ariel [1 ]
机构
[1] Arizona State Univ, Mat Sci & Engn, Sch Engn Matter Transport & Energy, Tempe, AZ 85287 USA
[2] Wroctaw Univ Sci & Technol, Fac Fundamental Problems Technol, Dept Semicond Mat Engn, PL-50370 Wroclaw, Poland
基金
美国国家科学基金会;
关键词
Janus monolayer; homostructure; polarizationfield; excitonic properties; interlayer coupling; band renormalization; TRANSITION-METAL DICHALCOGENIDES; MONOLAYER;
D O I
10.1021/acs.nanolett.4c04374
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Two-dimensional (2D) Janus excitonic materials are a novel class of two-faced 2D materials characterized by distinct atomic arrangements in their top and bottom layers. These materials feature different chalcogen atoms on opposite sides of a transition metal layer, creating a unique out-of-plane polarization field (Janus field) due to the differing electronegativity values of these atoms. In this work, we realized 2D Janus homobilayers with controlled Janus field configurations, such as up arrow up arrow and up arrow down arrow, to study the effects of the Janus electric field on band alignment and overall optical emission characteristics. Our results demonstrate that 2D Janus homobilayers exhibit notable changes in excitonic behavior depending on whether the Janus fields are aligned in the same direction or oppose each other. Comparisons between natural and artificial classical TMD homobilayers further illustrated the impact of the Janus field architecture on 2D Janus homobilayer excitonic responses.
引用
收藏
页码:15700 / 15706
页数:7
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