Fabrication of P-Type ZnO:N Film by Radio-Frequency Magnetron Sputtering for Extremely Thin Absorber Solar Cell Applications

被引：0

作者：

王相虎 ^{[1
]}

李荣斌 ^{[1
]}

范东华 ^{[2
]}

机构：

[1] School of Mechanical Engineering,Shanghai Dianji University

[2] School of Applied Physics and Materials,Wuyi

来源：

Chinese Physics Letters | 2013年 / 30卷 / 03期

关键词：

D O I：

暂无

中图分类号：

TM914.42 [];

学科分类号：

摘要：

We successfully fabricate p-type ZnO:N films by using rf magnetron sputtering and in situ annealing in O2atmosphere.These p-type ZnO:N films can be used as p-type window materials for extremely thin absorber（ETA）solar cells composed of quartz glass/p-ZnO:N/i-ZnO/CdSe/i-ZnO/n-ZnO:Al.The short-circuit photocurrent density,open circuit voltage,fill factor and conversion efficiency of the ETA solar cells can be determined to be8.549mA/cm2,0.702V,0.437 and 2.623%,respectively,through measurements of photovoltaic properties under illumination with a 100mW/cm2 at air-mass（AM） 1.5.

引用

页码：135 / 138

页数：4

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