Fabrication of P-Type ZnO:N Film by Radio-Frequency Magnetron Sputtering for Extremely Thin Absorber Solar Cell Applications

被引：0
|
作者：
王相虎 [1 ]
李荣斌 [1 ]
范东华 [2 ]
机构：
[1] School of Mechanical Engineering,Shanghai Dianji University
[2] School of Applied Physics and Materials,Wuyi
来源：
Chinese Physics Letters | 2013年 / 30卷 / 03期
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中图分类号：
TM914.42 [];
学科分类号：
摘要：
We successfully fabricate p-type ZnO:N films by using rf magnetron sputtering and in situ annealing in O2atmosphere.These p-type ZnO:N films can be used as p-type window materials for extremely thin absorber（ETA）solar cells composed of quartz glass/p-ZnO:N/i-ZnO/CdSe/i-ZnO/n-ZnO:Al.The short-circuit photocurrent density,open circuit voltage,fill factor and conversion efficiency of the ETA solar cells can be determined to be8.549mA/cm2,0.702V,0.437 and 2.623%,respectively,through measurements of photovoltaic properties under illumination with a 100mW/cm2 at air-mass（AM） 1.5.
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页码：135 / 138
页数：4
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