Enhanced Performance in Perovskite Organic Lead Iodide Heterojunction Solar Cells with Metal-Insulator-Semiconductor Back Contact

被引:0
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作者
石将建 [1 ,2 ,3 ]
董婉 [4 ]
徐余颛 [1 ,2 ,3 ]
李春辉 [1 ,2 ,3 ]
吕松涛 [1 ,2 ,3 ]
朱立峰 [1 ,2 ,3 ]
董娟 [1 ,2 ,3 ]
罗艳红 [1 ,2 ,3 ]
李冬梅 [1 ,2 ,3 ]
孟庆波 [1 ,2 ,3 ]
陈强 [4 ]
机构
[1] Key Laboratory for Renewable Energy,Chinese Academy of Sciences
[2] Beijing Key Laboratory for New Energy Materials and Devices
[3] Institute of Physics,Chinese Academy of Sciences
[4] Laboratory of Plasma Physics and Materials,Beijing Institute of Graphic
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TM914.4 [太阳能电池];
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摘要
Metal-insulator-semiconductor back contact has been employed for a perovskite organic lead iodide heterojunction solar cell,in which an ultrathin Al2O3 film as an insulating layer was deposited onto the CH3NH3PbI3 by atomic layer deposition technology.The light-to-electricity conversion efficiency of the devices is significantly enhanced from 3.30%to 5.07%.Further the impedance spectrum reveals that this insulating layer sustains part of the positive bias applied in the absorber region close to the back contact and decreases the carrier transport barrier,thus promoting transportation of carriers.
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页码:183 / 186
页数:4
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