Bridgmangrowthandcharacterizationoflanganite(La3Ga5.5Nb0.5O14,LGN)singlecrystal

被引:0
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作者
Chengkai Ren [1 ]
Libin Yin [1 ]
Shuai Wang [2 ]
Weirong Chen [3 ]
Sheng Wang [1 ]
Kainan Xiong [1 ]
Xiaoniu Tu [1 ]
Ningzhong Bao [2 ]
Yanqing Zheng [4 ]
Jun Chen [5 ,6 ]
Erwei Shi [1 ]
机构
[1] Shanghai Institute of Ceramics,Chinese Academy of Sciences
[2] State Key Laboratory of Material-Oriented Chemical Enganeering,College of Chemical Engineering,Nanjing Tech University
[3] The State Key Discipline Laboratory of Wide Bandgap Semiconductor Technology,School of Microelectronics,Xidian University
[4] College of Materials Science and Chemical Engineering,Ningbo University
[5] Beijing Advanced Innovation Center for Materials Genome Engineering,Department of Physical Chemistry,University of Science and Technology Beijing
[6] Hainan
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O78 [晶体生长];
学科分类号
摘要
As a promising optical and piezoelectric crystal,efficient growth of LGN single crystal is crucial for its practical applications.Herein,a langanite(La3Ga5.5Nb0.5O14,LGN) crystal with high quality was successfully grown by the Bridgman method along the Z direction.In order to prepare high-purity polycrystalline precursors for LGN crystal growth,the sintering conditions of LGN polycrystalline precursors were studied in detail.The melting point of LGN was also measured to provide a reference for the crystal growth temperature.For the [001] oriented wafer,the full width at half maximum(EWHM) value of the nigh-resolution X-ray diffraction(HRXRD) analysis is 38.52",demonstrating that the LGN crystal exhibits excellent crystalline quality.In addition,we also measured the thermal properties and transmission spectrum of the as-grown LGN crystal.It is found that the absorption peak at 1.85 μm of the LGN crystal grown in air using the Bridgman method disappears compared with previous reports(grown in N2+(1-3) vol% O2 atmosphere),which is attributed to the oxygen-enriched growth environment.Similar phenomenon also occurs in other LGS-type disordered crystals.It is believed that these findings may expand the potential applications of LGS series crystals at 1.85 μm.
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页码:584 / 590
页数:7
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