MBE GROWTH OF InGaAlAs LATTICE-MATCHED TO InP BY PULSED MOLECULAR BEAM METHOD.

High-quality InGaAlAs lattice-matched to InP was obtained by MBE with a pulsed molecular beam. Very narrow full width at half maximum (FWHM) of a photoluminescence spectrum at 4. 2 K (4. 5, 9. 0, 10. 3, 13. 1, 16. 2 Mev) was obtained for In//0//. //5//2(Ga//1// minus //xAl//x)//0//. //4//8As (x equals 0, 0. 25, 0. 5, 0. 75, 1). The dependence of the energy band gap of In//0//. //5//2(Ga//1// minus //xAl//x)//0//. //4//8As on Al composition, x, was found to be linear in the range of 0 less than equivalent to x less than equivalent to 1.