AlN/GaAs interface analyses by auger electron spectroscopy and x-ray photoelectron spectroscopy

被引：0
|
作者：
Cao, Xin [1 ]
Luo, Jinsheng [1 ]
Chen, Tangsheng [1 ]
Chen, Kejin [1 ]
机构：
[1] Xi'an Jiaotong Univ, Xi'an, China
来源：
Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors | 1999年 / 20卷 / 07期
关键词：
Interfaces (materials) - Semiconducting gallium arsenide;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
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页码：539 / 542
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