Gd on GaN(0001) surface: Growth, interaction, and Fermi level movement

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机构：
[1] Xiao, Wende
[2] Quo, Qinlin
[3] Xue, Qikun
[4] Wang, E.G.
来源：
Xue, Q. (qkxue@aphy.iphy.ac.cn) | 1600年 / American Institute of Physics Inc.卷 / 94期
关键词：
Annealing - Crystal orientation - Fermi level - Low energy electron diffraction - X ray photoelectron spectroscopy;
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摘要：
The growth, interfacial reaction, and Fermi level movement of Gd on n-type GaN(0001)-(1×1) surface were studied by using x-ray photoelectron spectroscopy. It was observed that the annealing promotes further diffusion and an interfacial Gd-Ga exchange reaction which reduces the Schottky barrier height. It was found that the Gd grows in a layer-by-layer-like mode and reacts with the substrate at the interface which lead to the formation of metallic Ga at room temperature.
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