GaAs FET power amplifiers for PCS applications

被引：0
|
作者：
机构：
[1] Anon
来源：
| 1600年 / Horizon House, Norwood卷 / 38期
关键词：
Code division multiple access;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
For wireless base station applications, high linearity GaAs FET amplifiers have been developed. The PCS family of amplifiers offers premium performance over the 1.9 to 2 GHz frequency range and at power levels from 5 to 200 W. The PCS 1900 family of high power amplifiers have achieved the required code division multiple access (CDMA) performance by using a high linearity class A GaAs FET design.
引用
收藏
相关论文
共 50 条
  • [41] An InGaP/GaAs composite channel FET for high power device applications
    Nakajima, S
    Nakata, K
    Tanaka, K
    Otobe, K
    IEICE TRANSACTIONS ON ELECTRONICS, 2001, E84C (10): : 1300 - 1305
  • [42] Design Procedure for Integrated Microwave GaAs Stacked-FET High-Power Amplifiers
    van der Bent, Gijs
    de Hek, Peter
    van Vliet, Frank E.
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2019, 67 (09) : 3716 - 3731
  • [43] A NONLINEAR GAAS-FET MODEL FOR USE IN THE DESIGN OF OUTPUT CIRCUITS FOR POWER-AMPLIFIERS
    CURTICE, WR
    ETTENBERG, M
    MICROWAVES & RF, 1985, 24 (05) : 171 - 172
  • [44] LARGE-SIGNAL CRITERIA FOR THE DESIGN OF GAAS-FET DISTRIBUTED POWER-AMPLIFIERS
    LADBROOKE, PH
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (09) : 1745 - 1748
  • [45] Power amplifiers drive cellular/PCS systems
    不详
    MICROWAVES & RF, 1997, 36 (11) : 150 - 150
  • [46] Power amplifiers drive PCS and cellular systems
    McCann, D
    Hoppin, B
    MICROWAVES & RF, 1996, 35 (07) : 132 - &
  • [47] GaAs FET Broadband Power Amplifier for L and S Bands Applications
    Ribate, M.
    Mandry, R.
    Latrach, M.
    Errkik, A.
    El Abdellaoui, L.
    ICCWCS'17: PROCEEDINGS OF THE 2ND INTERNATIONAL CONFERENCE ON COMPUTING AND WIRELESS COMMUNICATION SYSTEMS, 2017,
  • [48] A NONLINEAR GAAS-FET MODEL FOR USE IN THE DESIGN OF OUTPUT CIRCUITS FOR POWER-AMPLIFIERS
    CURTICE, WR
    ETTENBERG, M
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1985, 33 (12) : 1383 - 1394
  • [49] An InGaP/GaAs composite channel FET for high power device applications
    Nakajima, S.
    Nakata, K.
    Tanaka, K.
    Otobe, K.
    IEICE Transactions on Electronics, 2001, E84-C (10) : 1300 - 1305
  • [50] Transformer coupled stacked FET power amplifiers
    McRory, JG
    Rabjohn, GG
    Johnston, RH
    IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1999, 34 (02) : 157 - 161
12345